A large area of CdS nanotube arrays is fabricated by a facile way of layer-by-layer deposition.
Obviously, many small particles had covered up the whole surface area and embedded in the cross-sectional area of CdS NPs.
In this work, a large area of CdS nanotube arrays on silicon wafer is successfully fabricated by the method of layer-by-layer deposition using well-aligned ZnO nanorod arrays as removable templates.
The BET surface area of the CdS-TiO2 photocatalyst was increased by 55.13 % when the CdSe-TiO2 particles were modified by C60.
The active area of TiO2 for CdS deposition decreased, and a porous CdS capping layer formed on top of TiO2 arrays.
Specifically, a significant extension of surface area of a NW CdS array can be obtained by using the branched morphology.
The inset shows the variation of the intensity ratio I LO CdS/I(E g TiO2 determined from the integrated areas of the CdS LO mode and the E g anatase TiO2 mode, with the spectral acquisition time.
Meanwhile, increased BET surface area, good distribution of CdS, strong light absorption and low carrier recombination were observed in type 1 heterointerface.
By varying the growth time, the length of nanobranches was optimized to provide a larger area for deposition of CdS quantum dots.
As the ZnO pyramid arrays formed by thin nanowires have anti-reflection character, high specific area for deposition of CdS sensitizer and fast photoelectron transmission channels to FTO substrate, higher photoelectric conversion efficiency is achieved.
