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The peaks are located at around 0.05 and 0.25 V (vs. SCE) when the scan rate is 2 mV s-1.

Observed FTIR bands are located at around 600 to 750 cm−l (wagging modes), 800 to 1,000 cm−1 (bending modes), and 2,050 to 2,200 cm−1 (stretching modes) associated with Si-H n (n ≥ 1) bondings.

The satellite peaks of Ni 2p3/2 and Ni 2p1/2 are located at around 861.5 and 880.0 eV, respectively.

Because the peaks are located at around 0 V, the pseudocapacity can be generally attributed to the quinone/hydroquinone transformation [13].

After the third cycle, reversible cathodic and anodic peaks are located at around 0.85 and 1.75 V because of the reversible oxidation/reduction processes during charge/discharge cycles, respectively.

Observed FTIR bands are located at around 2,050 to 2,200 cm−1 (stretching modes), 800 to 1,000 cm−1 (bending modes), and 600 to 750 cm−1 (wagging modes) associated with Si-H n (n ≥1) bondings, and finally, the band at 1,000 to 1,300 cm−1 corresponds to the stretching modes of the Si-O-Si bonds in the SiO x.

Projecting the solutions from the Gaussian VoP method onto the time-dependent true anomaly of the main body shows two possible locations in the ±6σ interval surrounding the estimated event epoch: one is located at around +11 min and the other at +20 min after the estimated event epoch.

The c t″ phase boundary at room temperature is located at around x = 0.85 0.9 in both bulk and nanocrystalline CexZr1 xO2.

The first measurement site was located at around 0.9 m away from the water drain, where the soil was identified as wet soil.

A pair of redox peaks is located at around 0.125 and 0.281 V with the scan rate of 2 mV s-1.

The peak of pair distances distribution function (PDDF) is located at around 16.3 Å, but the maximal distance D max can be longer than 62.0 Å (Fig. 1C).