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Both layers are fully strained, and the InGaN layer is not relaxed based on the RSM diagram.
All epilayers are intentionally undoped and the InGaAs layers are fully strained since their thickness is far below the critical thickness.
In the superlattices, there is no obvious interdiffusion at the interfaces, and the LSMO and BTO layers are fully strained to the SrTiO3 substrates.
Reciprocal space mapping measurements reveal that the DH samples are fully strained with different thicknesses, whereas the strain in the SH samples are significantly relaxed with the increasing thickness of the InGaN film.
Our X-ray results are similar for both substrates showing that the 20 nm films are fully strained while thicker films have two components corresponding to a fully strained and a relaxed component.
The upper and lower parts of the InGaN layer are fully strained and have low indium contents.
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In Figure 3a, in the part marked with InGaN, point S is fully strained, whereas point R is fully relaxed.
According to the RSM measurement, sample E was fully strained and no lines were observed in the SEM pictures.
In spite of being fully strained, InGaAs SBL is also expected to reduce the internal compressive strain in the InAs QDs.
Therefore, higher principal strain values are found in positions where the In0.4Ga0.6As lattice of the islands is fully strained to the GaAs lattice constant.
Since the In0.15Ga0.85As layers we had grown were so thin (2 nm) that they should be fully strained, tc should have no difference between the InAs/GaAs and InAs/In0.15Ga0.85As samples grown on the GaAs (100) substrates [20, 21].
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