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Figure 2 shows the continuous STM images of the surface structure transitions by applying voltage from −0.5 to +0.5 V.
Figure 2 Continuous STM images of surface structure transitions on the InAs WL by applying voltage from −0.5 to +0.5 V without As4 irradiation (substrate temperature: 240°C).
We first fabricated a hole structures (width: 25 nm, depth: 3 nm) by applying voltage from −1 to +1 V as shown in Fig. 4a.
Therefore, in this paper, using this phenomenon, we tried to fabricate high crystalline InAs nano dots by applying voltage from an STM tip at different temperatures without breaking MBE growth environments.
At each step force, the I-V characteristics were measured by applying voltage from −0.5 to 0.5 V and the resulting current was recorded by a Keithley 2602 SourceMeter (Keithley Instruments Inc., Cleveland, OH, USA) connected to a host computer through GPIB/USB cable and coupled with the TCC.
This random nucleation makes it difficult to address each individual self-assembled QD, then several groups reported site-selective QD growth methods: nano-jet probe method [4], applying voltage from an STM tip [5], and growth on patterned substrates [6, 7].
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The system was monitored while applying voltages from +500 to −800 mV.
We applied voltage from −6 to +6 V.
Next, we applied voltage from −3 to +3 V at 150°C as shown in Fig. 1c.
The applied field was sweeping from 0.24 to 3.70 Vμm-1 (applied voltage from 50 to 771 V) with anode-sample distance of 210 μm.
By varying the applied voltage from −800 to 800 V, the electrical charge measurement experiments with 7 µL deionized (DI) water droplets are performed.
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