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voltage of −0.5 kV was applied to the substrate holder.
The solution was then applied to the substrate via dip-coating.
A very short electrical current impulse applied to the substrate leads to the surface heating.
Presumably, GNPs aggregate during the drying of the nanoparticle solution applied to the substrate.
The coating formulations were applied to the substrate via pad-mangle (Roaches Ltd ,UK).
A pulse bias is applied to the substrate to accelerate the plasma.
During deposition, an rf bias was applied to the substrate to increase the ion bombardment energy.
Different pit shapes and depths were observed depending on the potential applied to the substrate.
The importance of bias voltage applied to the substrate during sputtering is considered.
Film crystallinity was drastically improved, when negative bias was applied to the substrate.
No bias was applied to the substrate holder during the depositions, which took place at room temperature.
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