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The Si substrate was applied as a back-gate.
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Moreover, the external photoresponsivity and gain can also be enhanced by applying a back-gate bias within the photocurrent generation path and by augmenting the interaction between graphene and the incident light.
This process opens up the possibility of employing STO substrates as a back-gate in functional oxide devices.
SiO2 film with the thickness of 300 nm is dielectric, and p+-Si works as a back-gate electrode.
This interaction can be applied as a gate voltage inside the QD.
As shown in Fig. 2a, when a back-gate voltage is 0 V, source-drain current (I sd) increases with laser power.
b Typical SEM image of a back-gate SWNT transistor.
Figure 1b shows a SEM image of a back-gate SWNT transistor.
a Schematic view and operating mechanism of a back-gate FeFET-based nonvolatile memory device.
The desired device type, i.e. NMOS or PMOS, is selected by applying an appropriate back-gate bias.
The silicon substrate acts as a back gate, while SiO2 is used as the back gate dielectric.
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