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Hall measurements yield a charge carrier density and a mobility of the 2DEG of about 7.4 × 1011 cm−2 and 9,340 cm2/Vs, respectively.
A carrier concentration of 5.5×1020/cm3 and a mobility of 15 cm2/V s yielding a resistivity of 7.5×10−4 Ω cm resulted from the conditions of high pressure, rf power, and electrode gap.
ZnO N deposited with a 0.5 sccm nitrogen flow rate exhibits p-type conductivity with a hole concentration of 2.1 × 1017/cm3 and a mobility of 3 cm2V− 1 s− 1 after annealing at 500 °C.
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More recently, another type of 2D material, black phosphorus, has been predicted to have a hole mobility of 10,000 26,000 cm2 V−1 s−1 [35], and experimentally, a mobility of 1000 cm2 V−1 s−1 has been achieved [36], showing very promising potential for electronic devices [37].
By modulating substituted groups and structural rigidity, a mobility of 4.8 × 10−3 cm2/Vs was achieved in solution processed device and the highest mobility of 0.2 cm2/Vs was obtained in single crystal devices.
Samples were collected from BH with a mobility of 0.18 mD/cP in 150 min (from inflation to deflation) and also from FAT with a mobility of 0.35 mD/cP in 200 min with minimal contamination.
Under PIPs, the system is slightly simpler, with a daily living component of either £53 or £79.15 a week, and a mobility component of either £21 or £55.25.
Thus, as shown in Figure 5(D), p27Kip1 totally disappeared in incubations at pH 6.5 and a mobility shift of β1 band was also observed.
This could be explained by a lower concentration gradient between the xylem sap and the external environment and a lower mobility of Calcium within the cell wall space (Clarkson, 1984; White and Broadley, 2003).
A more frequent movement of triple junctions and a higher mobility of the grain boundaries at elevated temperature would also explain the observed smaller grain aspect ratio and larger steady-state grain size at higher homologous deformation temperatures [1].
Graphene exhibits a very low resistivity of ~ 10−6 ohm-cm and a high mobility of ~15000 cm2/v.s [3].
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