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We investigated a new design for alignment marks in order to improve the overlay capability.
Gold alignment marks were used to select some SLEG position by OM.
The a-Si grating was precisely constructed on the a-Si waveguide with gold alignment marks for electron beam lithography.
The accuracy of our model has been validated with almost the same results for different alignment marks using our model and rigorous coupled wave analysis (RCWA).
The alignment marks consist of gratings with slightly different periods, leading to different Talbot distances with the same monochromatic planar wave.
This paper concentrates on the optimization of parameters of alignment marks to achieve the resulting moiré fringes with an optimum contrast.
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The key to the successful implementation of the technique is the appropriate alignment mark design, which can solve the problems of aligning photomasks to the random location, orientation and irregular shape exfoliated two-dimensional sheets on the substrates.
Moreover, three dimensions (3D) of alignment mark should be optimized to get higher WQs for self-aligned double patterning (SADP).
Both wafer alignment mark and mask alignment mark consists of linear grating arrays and "+" bar.
Then we conduct the experiments using a nanometer actuator to drive the wafer alignment mark meanwhile keeping the mask alignment mark motionless, which validates the feasibility and rationality of our designed scheme.
The contrast of moiré fringe varies with the gap between mask (alignment mark) and wafer (alignment mark), which will affect the phase comparison, and induce more errors as well.
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