Sentence examples for alignment band from inspiring English sources
I will discuss the interface energy level alignment, band bending, Debye screening, and charge separation dynamics as observed in surface analytical studies, and the implications to OLED and OPV.
The improved alignment band estimation can find a narrower band for banded alignment.
Besides the parallelization, the new CD-HIT includes other enhancements such as faster file reading, better filtering threshold estimation, more efficient word counting and better alignment band estimation, etc.
The alignment of band energies between conductive oxides and semiconductors is crucial for the further development of oxide contacting layers in electronic devices.
Our results provide a new perspective on band alignment: material's band alignment can be continuously and precisely shifted, without affecting the magnitude of the band gap, via substitution of well-selected impurity atoms for well-selected sites.
Three different structures of energy band alignment were obtained, and the change of band alignment influenced leakage current density-electrical breakdown field characteristics of the samples subjected to different post-deposition annealing ambients.
Novel heterostructured ZnFe2O4/Fe2TiO5/TiO2 composite nanotube arrays were obtained with staggered type II band alignment at the ZnFe2O4/Fe2TiO5 interface and type I band alignment at the Fe2TiO5/TiO2 interface.
This formed a staggered type II band alignment at the ZFO/FTO interface and a type I band alignment at the FTO/TiO2 interface.
This produces a staggered type II band alignment between ZFO and FTO, while a type I band alignment is produced between FTO and TiO2.
Al2O3/CuGaO2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO2 hetero-structure with a VBO of 2.32 eV.
A schematic band alignment diagram for the TiO2/CuGaO2 interface was constructed which showed a type II band alignment with a significant band bending of 0.48 eV.
