Sentence examples for affects of the device from inspiring English sources

The phrase "affects of the device" is not correct in English; it should be "effects of the device." You can use the corrected phrase when discussing the impact or influence that a device has on something, such as performance or user experience.

Example: "The effects of the device on battery life were significant, leading to longer usage times."
Alternatives: "impacts of the device" or "influences of the device."

Exact(1)

According to the WHO's Medical Eligibility Criteria for Contraceptive Use [ 12] studies done on the IUD -which does not have any contraindications related to age- among users over 35 years old, showed that incidences of side affects of the device on this age group were low.

Similar(59)

The above contact problems affect reproducibility of the device substantially, with variation of photocurrent within one order of magnitude depending on the contact quality (cast or pressed, etc).

It was also evident from the study that operational and clinical requirements would affect uptake of the device; it was a clear priority for the clinical participants to complete the patient consultations as quickly and efficiently as possible.

However, for an EOT device based on transmission measurement, the rough bottom side of the film still affects unfavorably the device performance.

We investigate how they will affect performance of the devices.

Dark current of quantum dot photodetectors is one of the most important factors which affects the performance of the device.

Series resistance strongly affects the performance of the device from around 107 Ω, leading to a significant degradation in the device performance, particularly for longer pillar heights.

Although the electric field does not play a role in the separation of the photogenerated carries, it nevertheless affects the performance of the device through influencing the contact resistance and charge transfer to the electrodes.

Interestingly, the modification of the hole selective layer shown in Fig. 11 leads to a reduction of the resistance in the low-frequency region, which distinctly affects the FF of the device.

However, in sub-45-nm complementary metal oxide semiconductor (CMOS) technology, the scaling of SiO2 gate dielectric thickness leads to an unacceptable gate leakage current, which affects the reliability of the device and causes an increase in static power dissipation.

Such conditions and other factors altering arterial and venous ratio indicate that the reference oxygen saturation has an estimation error, which affects both calibration of the device as well as validation accuracy.

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