The phrase "additional implantation" is correct and usable in written English.
It can be used in contexts related to medical procedures, technology, or any situation where something is being added or inserted.
Example: "The surgeon recommended additional implantation of the device to ensure optimal performance."
Alternatives: "further implantation" or "supplementary implantation".
The number of killer centers can be increased either by decreasing the sample temperature in the Mn implantation process, by decreasing the post-annealing temperature, or by an additional implantation process using Neon ions.
It encompasses axial vascularization and the additional implantation of a motor nerve serving as myogenic stimulator.
Additional implantation of a capsular tension ring facilitates estimation and performance of an appropriately sized and centered PPCCC in these eyes [ 9].
14 16 The additional implantation of a CTR may prevent IOL decentralisation/subluxation, posterior capsule opacification and anterior capsular phimosis as reported by other groups.
Because a higher pneumoperitoneum pressure generates stronger inhibition on the immune response and further studies are needed to elucidate whether or not the same high intra-abdominal pressure may cause additional implantation and invasion of EMs cells.
Thus, additional implantations of abdominal stent graft and bare metal stents were consequently needed.
These negative consequences may contribute to the ultimate failure of the device, reducing the lifespan of the biomaterial and necessitating additional implantations [ 23– 25].
Besides implants used for implantation, 4 additional implants were randomly chosen and evaluated with quantitative topography (The Danish Technological Institute, Copenhagen, Denmark) (Roughness profilometer, Somicronic Surfascan, 3CS, Hommel Somicronic, Saint-Andr-De-Corcy, France).
Moreover, it is shown that the undesired impurity trapping at RP/2 can be prevented by means of additional Si+ implantation into the vacancy-rich region of ion-implanted Si to balance the excess of vacancies.
Chen, C.-M., Chien, F.-T. High PerformAdditionalMasks GOLDD TFT Structure wIonout AddImplantationImplantation.
The parameters in order to remove Cu gettering at RP/2 are determined for the additional Si+ implantation.
