The phrase "act as a diffusion" is not correct in standard written English.
It may be intended to describe a process or function related to diffusion, but it lacks clarity and proper context.
Example: "In this experiment, the substance will act as a diffusion medium to facilitate the movement of particles."
Alternatives: "serve as a dispersal" or "function as a spreader".
Ultra-thin alumina, zirconia and titania layers deposited between the ITO and CdTe layers have been studied for their potential to act as a diffusion barrier.
The results show that the pre-deposited W interlayers act as a diffusion barrier for carbon, and thus significantly enhancing the nucleation of diamond.
In the present study the application of prior copper coating on Dual Phase (DP) steel was shown to act as a diffusion barrier for the alloying elements during annealing.
In addition, the surface scales of iron sulfide almost act as a diffusion barrier and inhibit the corrosion by a coverage effect strongly depending on H2S concentration by EIS measurement.
Unlike the previous DI-A1 test, the design of the Teflon filter in the injection borehole forced the water to flow through the filter and the open space between the filter and the borehole wall (the filter itself did not act as a diffusion barrier between the circulating solution and the rock).
The new strategy is to construct artificial diffusion terms in a physically-consistent manner, such that the artificial terms act as a diffusion term only in the curl of magnetic field to capture numerical discontinuities in the magnetic field while not affecting the divergence field (thus maintaining divergence-free constraint).
It is shown that the residual oxide layer acts as a diffusion barrier.
This support was composed of La2O3-stabilized ZrO2 particles that contained a Nd2O3-enriched surface layer and nanosized Al2O3 particles, which acted as a diffusion barrier.
A threshold temperature of 800 °C was determined, below which these films acted as a diffusion barrier for Ni diffusion from metallic substrate.
Furthermore, the exposure tests revealed that the (Cr,Ni 3Ge layer acts as a diffusion barrier, preventing the diffusion of the major coating element aluminum into the substrate.
N+ implantation induces the formation of a TiN layer which acts as a diffusion barrier for Ti4+; the oxide layer is thinner.
