Sentence examples for achieved for the devices from inspiring English sources

The stabilities of the four current states with 1 × 10−1, 1 × 10−4, 1 × 10−6, and 1 × 10−8 A achieved for the devices by using different erasing voltages were maintained for retention cycles larger than 1 × 104 s under a continuous reading test.

An improved charge storage characteristic with enhanced retention time has been achieved for the devices using VARIOT oxide floating gate.

Multiple resistance states have been achieved for the device by using different compliance currents and stop voltages during programming.

The high ultraviolet signal-to-noise ratio of 3 orders of magnitude with short response time less than 200 ms can be achieved for the device.

A specific energy density as high as 24 W h kg−1, with a corresponding power density of 468 W kg−1 was achieved for the device.

The best power conversion efficiency of 3.5% was achieved for the device with the 15-nm-thick sol-gel ITO treated with RTP at 800 °C for 30 s, as compared with 2.7% of the standard device under an illumination of AM 1.5.

Deep-blue light emission was achieved for the device based on P1d, a polymer based on TFT and the second generation (G2) of carbazole dendrimer pendant, that shows a maximum current efficiency (CE) of 1.26 cd A−1, corresponding to external quantum efficiency (EQE) of 1.27%, with Commission Internationale de L'Eclairage (CIE) coordinates of (0.16, 0.14).

The best performance was achieved for the device with Tcap = 600°C, pB = 12 × 1011cm−2, and d = 5 nm in a photovoltaic regime.

As for the mirror states, the same variation tendency for the modified devices is observed, with the highest reflectance over 80% achieved for the device by repeating the dip-coating process for five times (Additional file 1: Figure S4f).

As for the mirror states, same variation tendency for the three devices are observed, with the lowest transmittance of 5% achieved for the device by repeating the dip-coating process for five times (Fig. 8f).

With 50-ns, pulse reset voltage of 2.4 V was achieved for the device with 4 nmTiO2 layer (in Figure 5c), which is only about half of the voltage required by the device without TiO2 buffer layer.