The phrase "accumulation of carriers" is correct and usable in written English.
It can be used in contexts related to logistics, transportation, or telecommunications, where the gathering or collection of carriers is being discussed.
Example: "The accumulation of carriers in the supply chain has led to delays in delivery times."
Alternatives: "collection of carriers" or "gathering of carriers".
For an efficient brain-targeting therapy, the internalization and accumulation of carriers in brain cells are also important.
Through the accumulation of carriers, this technique can produce FETs whose performance is up to 2 orders of magnitude higher than that of conventional FETs (e.g. bottom-gate FETs with 300 nm SiO2 dielectric).
It would also be very useful to collect insonated and noninsonated tumors with the goal of assessing if accumulation of carriers is occurring (via extravasation) and perhaps perform microscopy work to validate the extravasation hypothesis.
This delivery system improved accumulation of carrier-siRNA complexes in the tumour tissue.
Therefore, we suggest that the pattern of results reported here—i.e., higher 'loss rate' of duration accumulation for carriers of genetic variants with higher 5-HT activity also holds for women population.
For example, the type II and type III band alignment of GaAs/GaSb and InAs/GaSb heterostructures can help to produce an accumulation of charge carriers on different sides of the core-shell interface, thus resulting in a high carrier concentration without intentional doping [13].
Thus, it was found that ES-NFs of NTO are a good conductive agent for the accumulation of photoexcited carriers in dye/TiO2 nanoparticles.
This phenomenon is attributed to the accumulation of charge carriers at the interface between contacts.
The top of the valence band of p-type silicon bends upward (ψs < 0 and Εs < 0) which causes an accumulation of majority carriers (holes) near the interface.
Smooth confining potentials can suppress the Auger recombination to a great extent and prevent accumulation of plenty carriers in the first several wells in the injection direction of InGaN/GaN QWs [22 24].
At an alkaline pH, the surface silanol groups were deprotonated to SiO (Fig. 8iii), leading to a concomitant accumulation of charge carriers in the p-type SiNW and increase in conductance.
