The phrase "accumulation channel" is correct and usable in written English.
It can be used in contexts related to finance, economics, or data analysis, where it refers to a method or pathway for gathering or accumulating resources or information.
Example: "The accumulation channel for investments in this sector has shown significant growth over the past year."
Alternatives: "collection pathway" or "gathering channel".
The buried channel is implemented without epitaxial regrowth or accumulation channel implantation.
Figure 1c shows the device performance in a saturation regime, in which the carrier density distribution between the source and drain contacts is non-uniform, with a pinch off of the accumulation channel near one of the contacts.
We proposed the SiC Delta-doped Accumulation Channel MOSFET (DACFET) consisting of the delta-doped layers for MOS channel and reported its high MOS-channel mobility.
More importantly, we find that these OFETs exhibit an unprecedented electro-mechanical robustness in air, even when they are not encapsulated in any protective capping layer: their performance does not deteriorate after multiple bending of the accumulation channel to a radius as small as ~200 μm.
Here, θ is an angle between the long axis of the striped domains and the edges of the contacts that define the physical width of the accumulation channel, W; θ can be easily controlled by changing the orientation of the Mylar sheet during drop-casting TIPS-pentacene solution.
This dielectric stack has been designed in view to combine low voltage operating devices, by the use of a high-k oxide which increases the charge in the accumulation channel and the gate capacitance, and highly stable devices which generally could be achieved with polymer dielectrics but not necessarily with strongly polar high-k oxides.
Accumulation of channel inhibition during a pulse train, as illustrated in Figure 1A, depends on channel recovery between pulses.
Then negative VG cannot provide the accumulation in channel, but the pinch off occurs alike in a regular junctionless field-effect transistor.
In order to avoid accumulation of channel block, the pulse sequence was applied every 2 min from a holding potential of −80 mV.
The interplay between activation and inactivation may also make Piezo1 most sensitive to rapidly applied mechanical stimuli, similar to previous reports for MscS, as slowly applied stimuli will lead to gradual accumulation of channels in inactivated states (Akitake et al., 2005).
