The phrase "accommodate strain" is correct and usable in written English.
It can be used in contexts discussing the ability of a system, material, or individual to handle or adapt to pressure or stress.
Example: "The new design of the bridge was engineered to accommodate strain from heavy traffic and environmental factors."
Alternatives: "withstand pressure" or "manage stress".
This characteristic is of prime importance in polycrystals where collective grain boundary motions are required to accommodate strain.
Due to their ability to accommodate strain in two dimensions, NWs are ideal candidates for monolithic integration of dissimilar semiconductor materials, e.g., of III V compounds on Si [12, 13].
The specific combination of {110} slip systems that act cooperatively to accommodate strain, as well as the amount of strain accommodated by each slip system, however, is dependent on orientation and on composition.
The interconnected AgNWs within the reciprocal architecture could effectively accommodate strain and show fairly good tolerance to stretching (stretchability of 800%), bending and twisting before they ruptured into patches.
To accommodate strain, lattice rotation takes place near the boundary plane to bring close packed planes of the related variants into parallelism, reducing the resistance for the boundary to move.
Twinning was identified as an active mechanism to accommodate strains in the shear region in both orientations.
Loading a SWCNT random network onto an elastomeric substrate simply affords a stretchable conducting film with the ability to accommodate strains greater than 20%[236 238]].
The remarkable performance was attributed to the porous 1D nanostructures that accommodated strain relaxation by slippage at the subunits wall boundaries and provided short Li-ion diffusion distance along the confined dimension.
By contrast, the fcc phase accommodated strain in a sequence as follows: (1) slip of dislocations by forming intersecting planar arrays of dislocations, (2) {1 1 1} deformation twinning, and (3) the γ fcc) → ε hcp) martensitic phase transformation.
This strongly suggests that these dislocations associated with the twin plane are normal growth dislocations and play no part in accommodating strains arising at the boundary due to twinning.
As the radius of the wire is free to accommodate the strain, the stress normal to the interface is taken to zero.
