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To achieve the high dopant activation needed to reduce contact and channel access resistances, active concentrations if possible above solid solubility are required.
The noise of the access resistances at 300 K originates from mobility fluctuations, while at low temperature operation it seems to have a trapping detrapping origin.
The main electrical parameters are investigated and it is evidenced that even at very low temperatures, the strain-engineering techniques boost the devices performances in terms of mobility, threshold voltage, access resistances and drain saturation currents.
The low frequency noise analysis clearly shows that from 300 K to 10 K, the carriers number fluctuation dominates the flicker noise in the channel in weak inversion, while the access resistances noise contribution prevails in strong inversion.
A −3 mV step was given 250 msec after each test pulse to monitor membrane and access resistances.
Membrane capacitance (CM) and electrode access resistances (Ra) were measured by using the "membrane test" protocol built into the pCLAMP 9.2 (Molecular Devices).
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We also measured the resistivity of our pipet solution and the combined access resistance and pipet resistance when the pipet was far from the surface.
Hall, J. E. Access resistance of a small circular pore.
Access resistance noise contributions were evidenced in strong inversion.
In all cases, access resistance was monitored by a step of − 10 mV (0.1 Hz) and experiments were discarded if the access resistance increased more than 20%.
Cell capacitance and access resistance were monitored and records were stopped if either parameter changed by more than 20%.
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