Sentence examples for access resistance from inspiring English sources

Access resistance noise contributions were evidenced in strong inversion.

However, we show that source drain regions have to be carefully scaled to optimize the trade off between access resistance and fringe capacitance.

Various non-idealities such as source drain access resistance, imaging charges at the interface/buffer, and velocity saturation are taken into consideration.

However, a 15× increase in access resistance was observed after H2/Ar anneal, significantly degrading the maximum drain current of the tri-gate InGaAs-OI JLFETs.

We begin with the bulk access resistance in staggered transistors which results from the charge transport through the organic semiconductor film.

Access resistance was monitored.

Access resistance averaged 4.2 MΩ.

Access resistance was typically 15 25 MΩ.

Access resistance compensation was not ordinarily used and acceptable access resistance was <25 MOhms.

Pipettes had an access resistance of about 3 MΩ.

Membrane potential (Vm) was corrected for electrode access resistance (Rs).