Exact(21)
c Presents the relationship between the electric field and bias voltage in multiplication and absorption layers.
As the multiplication region thickness decreases, the electric field difference between multiplication and absorption layers increases.
The doping concentrations in the multiplication, charge, grading and absorption layers are uniform.
The doping concentrations in the multiplication, charge, grading and absorption layers are uniform 3.
Fig. 4 Tunneling process and charge density change in the multiplication and absorption layers.
One simulation structure is named as APD-1 (multiplication and absorption layers are 800 and 1800 nm, respectively), and the other simulation structure is named as APD-2 (multiplication and absorption layers are 200 and 600 nm, respectively).
Similar(39)
If the absorption layer is completely depleted at breakdown voltage, x s will be the thickness of the absorption layer.
From Eq. (9), when the absorption layer is not completely depleted at breakdown voltage, x s is the width of the depletion region of the InGaAs absorption layer.
It is assumed that 20% of a total depletion absorption layer is wtunnel and the absorption layer is 400 nm thick.
ENZ materials lead to very large enhancement overlap in the optical field and the absorption layer.
Fig. 6 The δE for different fields in the absorption layer with different γ.
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