Sentence examples for absorber layers were grown from inspiring English sources

For a-Si H, the light a-Si H,r layers were grown by a remotheplight technique using absorber elayersde configuration in plasma-enhanced chemical vapor deposition (PECVD).

ZrC ZrN absorber layer was grown on the Zr infrared reflector, in conjunction with the top ZrOx anti-reflecting layer.

To incorporate Na into the CIGS absorber, Na-doped Mo (MoNa) back contact layers were grown on stainless steel foils.

The InAs layer is grown at 500 °C.

The InGaN layer was grown at 550°C.

This layer was grown via atomic layer deposition (ALD) [5].

CIGS absorber layers were co-evaporated on Mo-coated soda-lime glass (SLG) following the 3-stage process34.

Solar selective coatings based on carbon transition metal carbide nanocomposite absorber layers were designed.

Selenium absorber layers were deposited for 20 min by the ECD method.

CH3NH3PbI3 perovskite absorber layers were synthesized by modifying the solvent engineering method reported by Jeon et al. [26].

The mainly crystalline peak of the CIS absorber layers was the (112) and the secondary CuSe phase was not observed.