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ZrC ZrN absorber layer was grown on the Zr infrared reflector, in conjunction with the top ZrOx anti-reflecting layer.
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For a-Si H, the light a-Si H,r layers were grown by a remotheplight technique using absorber elayersde configuration in plasma-enhanced chemical vapor deposition (PECVD).
The InGaN layer was grown at 550°C.
This layer was grown via atomic layer deposition (ALD) [5].
The InAs layer is grown at 500 °C.
To incorporate Na into the CIGS absorber, Na-doped Mo (MoNa) back contact layers were grown on stainless steel foils.
PbSe thin film as absorber layer was electrodeposited on InP single crystal.
Absorbing properties, of ZrC ZrN absorber layer, were optimized by varying nitrogen flow during deposition of this layer.
The solar cells using Si-QDSL as an absorber layer were also fabricated.
This is because as longer time is used to anneal the CIS absorber layers, the number of thin film defects decreases and the crystallization of the CIS absorber layer is improved, then the FWHM value decreases.
Furthermore, the electrical and optical performances of the absorber layer are improved significantly with the increasing substrate temperature.
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