The phrase "absence of electrons" is correct and usable in written English.
It can be used in scientific contexts, particularly in discussions about atomic structure, electricity, or chemistry.
Example: "In a vacuum, there is an absence of electrons, which allows for the free movement of photons."
Alternatives: "lack of electrons" or "deficiency of electrons."
Inside of this radial distance is an almost complete absence of electrons, forming the "slot" region.
Stretching also lifts the performance of circuits formed out of negatively charged holes created by the absence of electrons, though not as strongly.
Correction: June 9 , 2001 Saturday An article in Business Day yesterday about advances by I.B.M. in stretching silicon during semiconductor manufacturing misstated the type of charge in circuits created by the absence of electrons.
In one material (the negative, or n-type, semiconductor) the charge carriers are electrons, and in the other (the positive, or p-type, semiconductor) the charge carriers are "holes" created by the absence of electrons.
Shockley's device is often called the bipolar junction transistor because its operation requires that the negatively charged electrons and their positively charged counterparts (the holes corresponding to an absence of electrons in the crystal lattice) coexist briefly in the presence of one another.
(Although holes are defined as the absence of electrons, physicists view both electrons and holes as "moving" within semiconductors). But sometimes a metal impurity or a structural flaw in the silicon provides an energy "state" between the valence and conduction bands, enabling electrons and holes to jump to that intermediate energy level — a move achieved with less energy gain or loss.
A well-established limitation of these reagents is their poor stability in the absence of electron-withdrawing substituents.
The reduction of TCE on the cathode surface is enhanced under this reducing electrolyte because of the absence of electron competition.
Cold-test (in absence of electron beam) numerical design performed theoretically and further optimized/validated with standard simulation code to predict the dispersion, interaction impedance, ohmic-loss and small-signal gain.
The present study investigates the photophysical properties of two highly conjugated pyrene and anthracene derivatives viz (E -4- 2- pyren-1-yl) vinyl) bE -4- 2- pyren-1-yland (E -4- 2- pyren-1-yl9-yl) vinyl) bE -4- 2- pyren-1-ylin thE -4- 2- pyren-1-ylncE -4- 2- pyren-1-yls such as N,N-diethylaniline (DEA) and N,N-diphenylamine (DPA).
It indicates the absence of electron-hole pairing in balanced systems.
