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(a) Voltage sweep SET and RESET.
The current was then measured during a voltage sweep.
Figure 1b and c show the direct I V relationship for these two cells with a voltage sweep rate of 100 V s−1.
The nanoisland firstly underwent process (0) as indicated in d, i.e., a voltage sweep from 0 to 10 V under a current compliance of 5 nA.
AC impedance measurements (1 MHz) of the devices were performed with the AC test signal biased with a voltage sweep within the range ±3 V.
As shown in Fig. 6a, the polarization curves is measured in 0.5 M H2SO4 electrolyte with a voltage sweep rate of 5 mV s−1.
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a Voltage sweeps are first used to reduce resistance at the contacts.
When a positive voltage sweep with an I comp of 1 uA (to prevent the device hard breakdown) were firstly applied whereas their BE were grounded, then as-fabricated devices transform into the LRS (or ON state), i.e., the SET process (for Device02 and Device28).
Then, in a negative voltage sweep, when the voltage reaches a critical value (V RESET), the device switches from LRS to the high resistance state (HRS), corresponding to a RESET transition in which the CF is ruptured (inset C).
It is worth noting that the device can also switch to ON-state at ~−4.5 V when a negative voltage sweep (0 → −5.5 V) was applied on a virgin device in the N-Forming process, as shown by the dark yellow line in Fig. 2.
A gate voltage sweep has been applied to the nanowire transistor by keeping a fixed Vsd = 0.025 V value.
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