Figure 1 shows the SEM image of a typical device, consisting of an individual carbon nanotube embedded in Pd/Nb (2.5 nm/50 nm) contacts.
The spectrum positions are in the middle of the TaO x switching layer with a typical device size of 0.4 × 0.4 μm2.
(a) Cross-sectional TEM image with a typical device size of 0.6 × 0.6 μm2.
A typical device characteristic of the CZTSSe samples that are studied in this paper is summarized in Table 1.
A typical device consists of a 5 μm-long n-type semiconductor and 300 μm-long p-type ones, i.e., the minority carriers in the p n junction are expected to travel ~300 μm for efficient charge collection, which requires rigorous control on their chemical purity [12, 15].
Upper left inset: SEM image of a typical device c NBE of pure and P-doped ZnO nanowires at 10 K. Inset: enlarged part of the peaks around 3.31 eV for P-doped ZnO nanowires d Temperature-dependent PL spectra of P-doped ZnO nanowires with the evolution of two separate peaks around 3.31 eV.
A summary of the back-gate and temperature dependence of the resistance of a typical device is presented in Figure 2 c,d.
Figure 2a shows the non-linear and asymmetrical I − V characteristics of a typical device made from a single Si NW with diameter of approximately 50 nm.
Figure 9 displays the SEM image of the cross section of a typical device, showing the smoothness, uniformity, and good contact between the stacked layers.
