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Reflectance R, transmittance T, and absorbance A spectra of samples are presented in Figure 3 in the wavelength range of 200 to 900 nm.
(a) Spectra of samples containing a GaAsN CL grown at 1 and 2 ML s−1 (D1 and D2, respectively), together with that of a sample with the CL grown at 1 ML s−1 using a lower RF plasma source power (D3).
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A spectrum of samples with randomized (stochastic) pore designs is comparatively studied with their periodic counterparts.
(a) FTIR spectra of samples measured at Brewster's angle (65°) as a function of TA for 1 h of nitrogen flow.
Fig. 2 a XRD spectra of samples with and without ZnO nanowires on InGaN-based thin film surfaces.
(a) Raman spectra of samples B001 and B113 (blue and red curves, respectively) measured in acoustic spectral range with excitation wavelength of 514.5 nm.
(a) The absorbance spectra of samples.
(a) Optical transmission spectra of samples produced at different temperatures.
The absorbance (A) spectrum of the samples were calculated by the following formula: A=1-T-R.
Figure 3 PL spectra of samples (a) A [the controlled QDs] and (b) B [the controlled CHP].
Figure 4 Raman spectra of samples A (a), B (b), C (c), and D (d), recorded by exciting the samples with 325-nm laser beam.
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