The dopant-free CzPAF-TPA-based device displayed significantly improved device performance in solution-processed flexible i-PSCs and flexible BHJ IOSCs with power conversion efficiencies (PCEs) of 12.46% and 7.52%, respectively, with negligible hysteresis, which is superior to that of standard HTM.
Various stitch patterns and modifications in device design significantly improved device tension-free performance far beyond clinically relevant benchmarks (p < .05).05
Fluoroalkyl trichlorosilane treatment of the Al2O3 dielectric was found to significantly improve device performance.
Organic semiconducting materials have attracted significant attention for use in optoelectronic devices, as they can significantly improve device performance.
Modifying hernia mesh design significantly improves device mechanical performance and enhances tension-free repair.
Further optimisation of the fabrication conditions to improve grain size and reduce the tilt angle could significantly improve device performance.
In comparison, the triple heterojunction scheme shows a lower dark current and hence a significantly improved photovoltaic device performance (3.8% in comparison to 2.6% for the sequentially deposited architecture).
When the additives of IOD, DMSO and PEG200 are applied to modify the pristine PEDOT PSS film, the corresponding device shows a significantly improved efficiency of 5.19%, 5.11% and 5.29% under the front illumination and an almost unchanged efficiency under the rear illumination, respectively.
Devices exhibit good transfer and output characteristics and a significantly improved μ eff over Si and Ge control pMOSFETs.
The introduction of 1,8-octanedithiol as a processing additive to the polymer/PCBM blend solution significantly improved the device performance relative to devices prepared from the blend solution without the additive.
Remarkably, devices containing 20%% of the (PCB 2C2 show significantly improved thermal device stability with a reduction in the PCE by 20%% occurring only after 2000 minutes.
