Sentence examples for a si of from inspiring English sources

The phrase "a si of" is not correct and does not make sense in written English.
It appears to be a typographical error or a misconstructed phrase.
Example: "This is a si of confusion." (Note: This example is incorrect due to the phrase itself.)
Alternatives: "a sign of" or "a symbol of".

Exact(19)

The thyme EO revealed a higher antiviral activity and a SI of 14.49, whereas EE and AE showed lower SIs (Table  3).

The most selective compound resulted 5a, with a SI of 11.9.

Regarding lateral displacement, a SI of 2.5 mm was effective for stress distribution compared to lateral displacement.

Fig. 2 Scattering efficiencies of a hybrid nanostructure consisting of a a SI of (70, 70, 35) nm associated with a SNP of r = 30 nm, with a gap of 30 nm irradiated by plane waves with different incident angles (α = 0°, 30°, and 45°), and b a SI of (60, 60, 35) nm associated with a SNP of r = 30 nm with different gap d g (30 nm, 40 nm or 50 nm) irradiated by 45°-incident plane wave.

Figure 2a shows the scattering efficiencies of a hybrid nanostructure, a SI of (70, 70, 35) nm associated with a SNP of 30 nm, with a gap of 30 nm irradiated by plane waves with different incident angles (α = 0°, 30° and 45°) [56].

Also a higher degree of supersaturation promotes a faster growth rate of the initial monolayer (effectively doubling itself from a SI of 2.75 to 3.35), further impeding any possible dissolution of the calcite surface and thereby reducing the availability of Ca2+ in the surrounding fluid.

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Similar(41)

Scratch tests indicated weaker adhesion of a-Si on graphene.

Finally, doping effects on the optical properties of the a-Si layer of the TFT device were also measured.

A document showing the optical index of a-Si and measurements of the diameters of the PS spheres.

b Absorption spectra of 300-nm periodic samples with an a-Si layer of 120-, 200-, and 280-nm thicknesses.

The investigated samples were MLs of alternating layers of a-Si and a-Ge and single layers of a-Si and of a-Ge.

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