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The a-SiGe:B film presented a resistivity of 2.46 × 103 (Ω-cm), resistance of 20.8 kΩ.
After such procedures, a single-mode EA-IOW device with an attenuation loss of about 6 dB/cm loss and square resistance of about 2 KΩ/square (with a resistivity of ρ = 3 × 10 3 Ω cm) was achieved.
"Poor" conductors, also known as insulators, have a resistivity of 1010 1017 ohm-centimetre (108 1015 ohm-metre) and a conductivity of 10-15 10-8.
Those that are classified as intermediate conductors have a resistivity of 100 109 ohm-centimetre (1 107 ohm-metre) and a conductivity of 10-7 1 10-7 1etre.
(a) Resistivity curves.
(a) Resistivity structure after removing no sensitivity part.
For numerical modeling, we considered a subsurface with a resistivity between 0.5 and 10 Ω m.
An integral measurement of impurities is made on line by using a resistivity meter.
Finally, the transient response was inverted to a resistivity structure, assuming a horizontally-layered structure.
A resistivity model with two sub-seafloor layers was estimated by the VFSA inversion.
The nanowire used has a resistivity at room temperature ρ300K = 290 m Ω.cm.
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