Sentence examples for a range of gate from inspiring English sources

In an attempt to disentangle the effects of permittivity and surface energy of the gate insulator (expressed by its dielectric constant k and water contact angle, respectively) on the performance of organic field-effect transistors (FETs), we fabricated top- and bottom-gate FET architectures with poly 3-alkylthiophenes) (poly 3-alkylthiophenesde-chain lengths, using a range of gate dielectrics.

By integrating the tested C-V curves, the 2DEG density (n 2D) over a range of gate biases can be extracted [10], and the calculated results are shown in Fig. 1.

Though he was by turns voluble, thoughtful, funny, self-deprecating and serious on a range of subjects, Gates sidestepped my questions about personal motives for his philanthropical choices.

A comparative study and analysis of a range of reversible gates from the literature is presented in this paper to obtain an optimal solution for designing these circuits.

A systematic, quantitative investigation of key device metrics for DMG DG device is presented and a comparison with SMG DG device is done for a wide range of gate and underlap lengths.

In accordance with previous transport data, the chemical potential crosses the topological surface states for a large range of gate voltages19.

(a) Hysteresis behaviors of a top-gate NW FET as a function of the sweep range of gate voltages.

The 2006 QDR already foresaw that America had to deal with a range of crises, and Mr Gates's review only tinkers with America's military structure.The QDR foresees a world in which political, economic and military power is "more diffuse".

Hysteresis curves of a back-gate Si NW FeFET with respect to the sweep range of gate voltages are shown in Fig. 3b.

Visual DSD has been used to model and analyse a wide range of DNA strand displacement devices, including logic gates (Qian and Winfree, 2011), neural network computation (Qian et al., 2011), fork and join gates (Cardelli, 2010), oscillators (Lakin et al., 2011) and a range of other devices including catalytic gates and schemes for simulating arbitrary chemical systems (Phillips and Cardelli, 2009).

WL appearance in the middle range of gate voltage bias was explained consistently with the decreased SO effect in the gate voltage region where sign change of Rashba factor takes place.