Sentence examples for a radius dependence from inspiring English sources
The basic model (Equation (10)) is therefore perturbed to minimize the difference to PREM by adding a radius dependence to the valence electron number δ z to fit PREM, given by delta z(h)~ =~left{ begin{array}{ll} &frac{c_{0} +c_{1} h+c_{2}h^{2} +c_{3}h^{3}{{1+d_{1} h+d_{2}h^{2}}quad,~ h>400 &qquadfrac{a_{0} +a_{ 1 h}{1+b_{1} h}{qquad,,,,,~ h{leq}400 end{array} right.
An existing model based on a climb-controlled bypass mechanism is in semi-quantitative agreement with the precipitate radius dependence of the threshold stress.
Based on our analysis, we hypothesize that the radius dependence of SpoVM adsorption observed in vitro is governed primarily by membrane tension, while for in-vivo localization of SpoVM, we propose a highly sensitive mechanism for curvature sensing based on the formation of macroscopic protein clusters on the membrane.
The radius dependence of the effective adsorption layer thickness of these polymers indicates it consists of two parts, that is a true adsorption layer and a repulsion layer between anchored chains on the capillary surface and flowing chains in solution.
For northward interplanetary magnetic field, the power law index of the tail radius dependence on the solar wind static pressure is consistent with the −14 power law that is theoretically expected when the total magnetic flux in the tail does not depend on the solar wind pressure.
In this paper is investigated the special class of elliptic differential second-order operators with an infinite number of variables with the property of a finite radius of dependence for variables.
In particular, the radius-dependence of the SBR should be considered as a "second order" effect which the phantom calibration cannot correct for, and whose severity depends on both reconstruction and quantification methods.
Statistical analysis of SEM images presented in Figs. 3 and 4 enables to plot out the length-radius dependences shown by points in Fig. 5. Figure 3 Cross-view SEM image of straight GaAs NWs on the GaAs(111)B substrate Figure 4 Cross-view SEM image of inclined GaAs NWs on the GaAs(211)A substrate.
Average tilt angle equals 20°, average thickness of surface layer is 357 nm, with the initial buffer layer thickness of 30 nm Figure 5 Experimental (points) and theoretical (lines) length-radius dependences of straight (stars) and inclined (open squares) GaAs NWs.
Draw a "radius" on the circle.
