The phrase "a pristine device" is correct and usable in written English.
It can be used to describe a device that is in perfect condition, clean, or unused.
Example: "After unboxing the new smartphone, I was amazed at how it looked like a pristine device, free from any scratches or fingerprints."
Alternatives: "an immaculate device" or "a flawless device".
With proton-irradiation doses over 1014 cm−2, IZO-TFTs device performance recovered to a level similar to that of a pristine device.
Compared with a pristine device (i.e., without SU-CNTs), the SU-CNTs-doped organic photovoltaic (OPV) cells showed an improved short-circuit current density and power conversion efficiency from 7.5 to 9.5 mandm2.1±0.1.1±0.1% to 2.2±0.2% (max. 2.5%), respectively.
a I-V characteristics of a pristine device under negative bias.
Therefore, the potential drop on a pristine device is higher across the TiO x layer.
The device current abruptly increased from an initial resistance state to a LRS when a large positive voltage (forming voltage) was applied onto a pristine device, which is referred to as the forming process (not shown).
The S1 memory devices showed a leakage current of approximately 1.5 pA at a Vread of + 0.1 V for a pristine device, lower than that of the S2 devices (23 pA) (Figure 7a,b).
Ten consecutive switching cycles at a CC of 100 μA are indicated by arrows 1 to 4. The pristine device had a high resistance state (HRS) with a leakage current of 5.26 nA at a read voltage (Vread) of +0.1 V.
Considering 50 RRAM devices with a size of 8 μm (Figure 5d), the average value of IRESET is higher for the first cycle as compared to the second cycle (320 vs. 390 μA), which is owing to a current overshoot effect during the formation or the first cycle of the pristine device at a CC of 300 μA.
Figure 3 Spectral response of photocurrent of a pristine MEH-PPV device, a MEH-PPV C60device, MEH-PPV C60device (+ZnCdTe) nandcomposite device containing 40 wt% ZnCdTe nanocrystals.
The best performance was attained from the pristine device, which showed a power conversion efficiency of 0.77% with a relatively high open-circuit voltage of 0.86 V, a short circuit current of 2.04 mA cm−2 and a fill factor of 43.98%.
A pristine memory device with high initial resistance state (IRS) can be switched in to a low-resistance state (LRS) by applying a high voltage stress.
