In a previous study, ZFO with poor crystal quality created deep energy levels in the bandgap and exhibited a substantially transient photocurrent during PEC tests under illumination [15].
These residues might interact with lnkH2B-H2A.Z in a less rigid conformation that causes poor crystal packing.
However, typical inorganic blue light emitters based on GaN/InGaN QWs usually have a low IQE due to the relatively poor crystal quality.
Moreover, the absorption spectra confirmed the non-practicable of high- and mid-Be content BeZnO as a bandgap engineering material system due to the complicated phase composition and poor crystal quality.
The lower growth temperature of GaN QB can result in poor crystal quality of MQWs [12, 13].
While for the ZnO seed layer with poor crystal quality, the nanorods grow in random directions with weak deep-level emission and wider diameter (about 1.5 μm).
Some fine particles could be observed on the catalyst with low Si/Al ratio of 50 (Figure 2A), which could be due to the poor crystal growth because of much more Al in this composition.
Although high quantum efficiency (>90%) and photocurrent (>42 mA cm-2) have been reported for FeS2 solar cells [7 10], the poor crystal quality of bulk FeS2 has led to very low open circuit voltages (<0.2 V) [5].
While the hydrothermal growth of YAG at 500 °C was previously met with slow growth rates or poor crystal quality we have found that growth at 600 630 °C yields good quality single crystals at rates of about 0.5 mm/side/week on (100) seeds.
As for the template with poor crystal quality, though the preferential growth direction is along [0001] ZnO azimuth, the orientation of the nanorods will be very disordered relative to the substrate at the initial stage because of the randomly distributed grains in the ZnO seed layer.
