The phrase "a phase change memory" is correct and usable in written English.
It can be used when discussing a type of non-volatile memory technology that stores data by changing the state of a material.
Example: "Researchers are exploring the potential of a phase change memory to improve data storage efficiency in future computing devices."
Alternatives: "a PCM" or "a phase-change storage".
Sebastian, A., Le Gallo, M. & Krebs, D. Crystal growth within a phase change memory cell.
Kim, S. et al. A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer [abstract 30.7].
The working principle of a Phase Change Memory (PCM) cell exploits the repeated reversible transition between a crystalline and an amorphous phase of chalcogenide alloys typically Ge2Sb2Te5, that are characterized respectively by a high (SET) and a low (RESET) conductive state.
The company makes ROM, NOR and NAND flash memory and is doing joint development of a phase change memory.
A phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated.
In a phase-change memory heat is used to shift a glassy material from an amorphous to a crystalline state and back again.
The prototype created by the researchers is the first to publically benchmark the performance of a phase-change memory chips working in a disk drive.
In a phase-change memory, heat is used to shift a glassy material from an amorphous to a crystalline state and back.
In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS).
Xie, Y. et al. Self-healing of a confined phase change memory device with a metallic surfactant layer.
This paper presents a novel phase change memory (PCM) cell emulator circuit design created solely with off-the-shelf discrete electronic components.
