The phrase "a lower gap" is correct and usable in written English.
It can be used in contexts where you are discussing a difference or space that is smaller or lesser in comparison to something else.
Example: "The analysis revealed a lower gap in the income distribution between the two regions."
Alternatives: "a smaller gap" or "a reduced gap".
The relationships were qualitatively similar at both sites, but the needles were shorter and the packing of needles was higher leading to a lower gap fraction within the shoot volume and to greater self-shading within the shoot at the nutrient-limited site, especially under low irradiance.
"We want a lower gap between compounds, with the slower tyre degrading slightly less.
They found weak evidence that trade liberalization as measured by tariff rates and export shares is associated with a higher gender wage gap, while a higher import share is associated with a lower gap.
At the same time a result that implies that trade is associated with a lower gap, would have to be combined with evidence on how trade simultaneously affected employment.
The smoothing and wrapping tools can be applied to the remaining models, using the Wrapping tool with a lower gap closing distance of 1.5 mm (chosen to balance computational time and quality), followed by the Smoothing tool as indicated previously.
These results indicate that the sustained Rho activation is dependent on the concentration of GAPs, and a lower GAP concentration sustains Rho activation.
Although patients treated with PMX-DHP tended to have a lower GAP-stage before AE-IPF, there were no significant differences before AE-IPF in PaO2 at rest, 6MWT results, serum levels of Krebs von den Lungen-6 (KL-6) and surfactant protein D (SP-D), or extent score based on HRCT between the two groups.
In comparison, the LCP specimens showed a significantly lower gap motion in torsion of 14.3 ± 0.6° (all p ≤ 0.015, Figure 8).
With NWs, a nanostructure can be constructed by inserting a slice of lower gap semiconductor along the axial direction such as CdSe/ZnSe [5], In(Ga As/GaAs [6], InAsP/InP [7], and GaAs/AlGaAs [8] systems or via self-assembled epitaxy on faceted NWs in the radial direction [9-11].
The key objective is to design a larger band gap for recombination and a lower band gap for absorption to energetically separate the mechanisms of carrier recombination and current generation.
The PL of the as-grown Sn-doped In2O3 NWs at 2.8 eV, which is shown in Fig. 3, is not related to band edge emission from In2O3, which is an n-type semiconductor with a direct energy band gap of 3.5 eV and a lower indirect gap of 2.6 eV.
