The phrase "a low resistance path" is correct and usable in written English.
It can be used in contexts related to electrical engineering or physics, describing a route that allows electric current to flow with minimal opposition.
Example: "In this circuit, we need to ensure that there is a low resistance path to maximize the efficiency of the power supply."
Alternatives: "a minimal resistance route" or "a high conductivity pathway".
These currents are usually harmless but high-voltage power systems can be vulnerable to GIC flow if they offer a low-resistance path for the currents compared to the ground itself (Boteler et al. 2013; Pirjola 2005; Viljanen and Pirjola 1994).
The electrical characterizations demonstrated a low resistance of the conductive paths (32 mΩ/via).
Therefore, in a patient with a shunt, the shunt will usually be the path of least resistance for CSF outflow, and it will dominate the CSF pathways, creating a low resistance CSF dynamic system whenever the valve is open.
When the gate insulator of a metal oxide semiconductor structure is subjected to electrical stress, traps or defects are progressively generated inside the oxide that eventually lead to the formation of a low-resistance conducting path between the electrodes.
While the bed was defluidized, the triboelectric charges accumulated on the particles migrated to a grounded electrode through the low-resistance paths offered by the conductive liquid.
With the aid of a molecular simulation software tool, we conclude that the particular growth directions represent the low-resistance paths for electron flow.
The basic principle of a low and high resistance path can thus be represented as in Fig. 1.
Many previous studies presumed that tumor cells grow along the "path of low resistance," and the path serves as a route for their distant migration [ 89].
This network consists of specific spatial arrangement of conductive elements so that low resistance electrical paths are developed for free movement of electrons.
Compared with the conventional triple RESURF LDMOS, a partial LVD N-top layer is introduced in the surface of N-well, providing a low on-resistance conduction path and leading to an optimized surface electric field, which alleviates the inherent tradeoff between the breakdown voltage (BV) and specific on-resistance (Ron,sp).
