The phrase "a low breakdown" is not commonly used in written English and may be unclear without context.
It could potentially be used in contexts discussing performance, efficiency, or failure rates, but it is not a standard expression.
Example: "The system experienced a low breakdown in performance during the testing phase."
Alternatives: "a minor failure" or "a slight malfunction."
Bulk breakdown with a low breakdown voltage is attributed to high VBG.
These transistors, which present a low breakdown voltage BVCE0 = 2.3 V and DC current gain of 300, are mounted on a custom printed circuit board (PCB).
Our optimized APD structures reveal a low dark-current density of Id="1×10-4 1×10-4A/cm2in M="10 atd a low breakdown voltagainbd<30V.
According to investigations by Chen et al. and Driad et al., respectively, the high interface state density will result in a large frequency dispersion, a low breakdown voltage and a large gate leakage current for InP metal-oxide-semiconductor capacitors with HfO2 deposited directly on InP substrates [18, 19].
In this study, we use the ultimate limitation of the transistor (known as the Johnson Limit) as a means to provide an ESD power clamp by utilizing a first low breakdown trigger device and a second high breakdown clamp device.
To overcome the disadvantage, a novel multi-finger GGnMOS structure with an additional low breakdown voltage diode is proposed in this paper.
Recent studies of rf breakdown physics in cryogenic copper X-band accelerating structures have shown a dramatic increase in the operating gradient while maintaining low breakdown rates.
ALD-dielectrics with a rough surface and many pin-holes cause high leakage current, low breakdown voltage, and extrinsic scattering of charge carriers at the graphene/high-k dielectric interface in graphene FETs.
A novel physical gas sensor based on CNTs has been demonstrated with low breakdown voltage due to its extremely sharp radii [7, 8].
The long-term litter bag experiments showed very low breakdown rates (−k=0.0014 0.0037 d−k=0.0014 0.0037
In the HEMT, if the Schottky gate is adopted, this gate interface brings in large interface states which exacerbate the large leakage current and low breakdown field [7].
