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We optimized the doping concentration such that our FeFET memory devices exhibit excellent memory characteristics with a low programming voltage while maintaining a large modulation in channel conductance and a long retention time.
Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3 × 104 s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFF ratio higher than 102.
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The MFT framework specifically allows for demodulation of wideband CPM signals with a large modulation depth as the examples shown in subsequent sections.
As presently reported, the selectivity of the deposition of Si/SiOx nanoparticles on PDMS versus UV/O3 converted SiOx offers a great opportunity for the fabrication of periodic structures with large modulation in refractive index.
Based on the large modulation in gene expression of the panel of genes (collagen types I and II, SOX9 and P4Hα(1)) investigated in this study, it appears that cells from the outer meniscus are relatively more responsive to lowered oxygen tension than are their inner counterparts.
It was interesting that cells isolated from the outer meniscus were relatively more responsive to 5% oxygen tension than were inner meniscus cells, based on the large modulation in gene expression of collagen types I and II, SOX9 and P4Hα(I).
In addition, we have demonstrated that hypomethylation can give rise to large modulations in the proportion of key seed fatty acid components, and that these are transmitted through at least one meiotic event.
Such a model is in agreement with our data as the RAFs indicated that the azimuthal positions showing the largest modulation in neural response to sound location are around the frontal midline.
In addition, within individuals we have shown that lower visual field stimuli give rise to significantly larger modulations in gamma-band activity than upper visual field stimuli, consistent with previous findings (Portin et al., 1999).
The submicron junction Rn value is in the range of 35 100 Ω, resulting a large SQUID modulation voltage in a wide temperature range.
By decreasing R1, a strong blue-shift of ω - - mode is obtained due to which a Fano resonance with large modulation depth is perceived in the spectrum.
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