The phrase "a higher threshold voltage" is correct and usable in written English.
It can be used in contexts related to electronics, electrical engineering, or discussions about circuit design where voltage levels are being compared.
Example: "In this circuit, we need to ensure that the transistor operates with a higher threshold voltage to prevent unwanted switching."
Alternatives: "an increased threshold voltage" or "a raised threshold voltage".
First, a higher threshold voltage is required to drive proteins into the large nanopore.
Comparing with small nanopores, a higher threshold voltage of 300 mV is observed to drive the protein into the nanopore.
Comparing with small nanoparticles, a higher threshold voltage of −500 mV was observed to drive the single PS microspheres (~100 nm) into amine-functionalized solid-state nanopores.
It is observed that a higher Ge content in the GeSbTe material leads to a higher threshold voltage in the memory cell, as shown in Fig. 5f.
However, the translocation events gradually disappeared when the voltage bias was below −600 mV, which suggested that PS microspheres across chemically modified nanopores needed a higher threshold voltage.
Besides, it is a generally held view that a lower concentration of free electrons in active layer brings out a higher threshold voltage [29].
We expect that such a high threshold voltage is mainly associated with the larger dimension of nanopores.
A subset of non-GFP labeled taste cells exhibited large voltage-dependent Na+ and K+ currents and a high threshold voltage-gated Ca2+ current.
On the other hand, a voltage multiplier with a few stages has less voltage drop between its stages but requires higher threshold voltage for all stages to work simultaneously.
The select transistor modulation allows to eliminate all the undesired resistive loads always present in the cell array structure, so that the contribution of cells with higher threshold voltage to the total measured current is measurable, and the total threshold voltage distribution is measured.
Examination of electrical stability for 5% doped IBZO and ISZO devices made at 200 °C also showed remarkable stability with slightly higher threshold voltage shifts of 1.9 and 2.7 V, respectively.
