Sentence examples for a higher sheet from inspiring English sources
Figure 2a shows that under a constant current density, electrodes with a higher sheet resistance fail more quickly.
Interestingly, a higher sheet resistance (6.87 Ω, with a corresponding resistivity of 10.305 × 10−9 Ω m) is measured for the silver film that was deposited on the PDMS substrate without any treatment.
Therefore, on higher NFC concentrations, uneven shrinkage and mechanical stress during the annealing can result in cracking and reduced PEDOT PSS film quality, and thus, a higher sheet resistance as observed in Fig. 3a.
The Hall Effect measurement results showed that the higher CHX bond density led to a higher sheet carrier density and lower sheet resistance, which was helpful for the fabrication of high-frequency and high-power field-effect transistors.
In comparison with the PEN/ITO substrate (sheet resistance R sheet = 13.3 ± 1.3 Ω sq−1), the graphene-MoO3/PEN substrate showed a higher sheet resistance of 552.0 ± 24.2 Ω sq−1, which could reduce the charge collection efficiency of the device, leading to a high series resistance, low shunt resistance, and low the fill factor (FF).
The ZnO film exhibited a high sheet resistance and low charge-carrier mobility before being combined with the graphene sheet.
The SWCNT electrodes exhibited a high sheet resistance owing to the semiconducting nanotubes and high contact resistance [4, 6, 8].
On the other hand, the SWCNT transparent electrodes exhibited a high sheet resistance of 1.6 × 106 Ω/sq with a transparency of 80%.
In Fig. 3, a QDSC with a high sheet density of 7.0 × 1010 cm−2 was obtained via optimization of growth temperature and V/III flux [45].
Thin films prepared by the vacuum filtration of the as-obtained graphene suspensions showed a high sheet resistance (~970 kΩ/□) and conductivity (35 S/cm).
Comparison of Figure 1a,1b shows that thinner Si membranes are more sensitive to the surface modifications (a much higher sheet resistance for the oxidized surface, as expected from discussions earlier, and a dramatic drop in sheet resistance with H termination).
