Sentence examples for a higher drain voltage from inspiring English sources

The phrase "a higher drain voltage" is correct and usable in written English.
It can be used in contexts related to electronics or electrical engineering, specifically when discussing voltage levels in circuits or devices.
Example: "To improve the performance of the circuit, we need to apply a higher drain voltage."
Alternatives: "an increased drain voltage" or "a greater drain voltage".

Exact(1)

A higher drain voltage improves the output swing, the maximum non-saturated light power, the conversion gain and the FWC.

Similar(59)

We compared the drain current saturation of G-FET at higher drain voltage regime on silicon, SiC, and the SiO2 substrate.

The associated decrease in photoconductance ΔG (Supplementary Fig. S3) is partly owing to the increased temperature stemming from Joule heating and partly owing to inhomogeneous broadening of the plasmon resonance due to the potential gradient along the graphene at higher drain voltages.

For higher drain voltages, on-currents up to several mA are possible (see Supporting Information S4).

Ambipolar transistors are expected to have lower on/off ratios than unipolar transistors due to the overlap of hole and electron injection at higher drain voltages.

Due to the injection of opposite charge carriers at higher drain voltages (ambipolar regime; Supporting Information, S4) none of the transistors can ever be fully turned off.

Differences are minimal, even at high drain voltage.

In contrast, at the high drain voltage the drain current below v G = 0 grows strongly with decreasing barrier strength.

A newly proposed method, called the current-dependent hot-electron stress, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltages.

However, the high sheet electron density inherently in GaN-based HEMTs will inevitably induce the spillover of transport electrons at high-drain-voltage conditions, and that becomes a growing issue.

As observed on the conventional AlGaN/GaN HEMT (black solid line), the potential height toward the GaN buffer layer is insufficient to well confine the 2-DEG, and a spillover of transport electrons is hence expected under high-drain-voltage conditions.

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