Sentence examples for a hard breakdown from inspiring English sources

After the initial reset operation, the set operation was achieved by sweeping a positive voltage from 0 to 1.5 V with 1 mA of current compliance to protect the device from a hard breakdown (curve 3).

The gate oxide in the s-Si structure exhibits a hard breakdown (HBD) at 1.9 × 104 s, whereas HBD is not observed in bulk Si up to a measurement period of 1.44 × 105 s.

In addition, the compliance current was set to 1 mA to avoid any hard breakdown of the devices.

The maximum current was limited by a compliance current (CC) to avoid a permanent hard breakdown when unipolar HRS switched to LRS. Figure 1 SEM image and unipolar RS behaviors of ZnO microwire and distribution of set and reset voltages.

Therefore, the device cannot switch to HRS by applying a negative voltage, indicating that an irreversible hard breakdown occurs in Pt/HfO2/TiO2/HfO2/TiN device.

The insulating Hf N Ox vacancy clusters (Vo+) protect the device from hard breakdown and perform a self-compliance property.

In order to prevent hard breakdown of RRAM device, a current-limiting resistor of 3 kΩ was connected in series with the device.

A 50-μA compliance current was used to prevent hard breakdown.

After more than 103 sweep cycles, a repeatable self-protective characteristic of the device without hard breakdown was observed.

When a positive voltage sweep with an I comp of 1 uA (to prevent the device hard breakdown) were firstly applied whereas their BE were grounded, then as-fabricated devices transform into the LRS (or ON state), i.e., the SET process (for Device02 and Device28).

The detailed I-V characteristics reveal that the two N-SET behaviors have an obvious different voltage and the N-SET behaviors may cause hard breakdown because of the high compliance current in the N-RESET process.