The phrase "a gap of approximately" is correct and usable in written English.
It can be used when discussing measurements, timeframes, or differences that are not exact but are close to a certain value.
Example: "There is a gap of approximately five years between the two studies."
Alternatives: "a gap of about" or "a gap of roughly".
Separated by a gap of approximately a hundred and thirty-seven miles, they sometimes pull apart, only to draw closer again.
A gap of approximately 20 μm, which is equivalent to the CNT height, can be observed in Figure 4b.
The conventional MIMO receiver, in contrast, meets the target-PER only at ([!hat {gamma }_{mathrm b}] approx 5.4) dB, leaving a gap of approximately 3.3 dB.
Au contact electrodes with a gap of approximately 190 nm were fabricated by electron beam lithography with PMMA as photoresist, followed by metal deposition and lift-off processes (Figure 1c).
The antibonding 4d states with e symmetry are located above the t b states, separated by a gap of approximately 1 eV from the valance band maximum and positioned just below the Fermi Level.
Being a wide-band-gap semiconductor (a gap of approximately 3.4 eV at room temperature) with a high thermal and chemical stability, zinc oxide (ZnO) has recently attracted a great scientific interest due to its possible applications in electronics and optoelectronics.
Furthermore, the tunneling current voltage (I-V) curve measured on top of the type A islands (Figure 2c) exhibits a semiconducting character with a band gap of approximately 0.9 eV, verifying that the 2 × 2 phase is not γ-FeSi2 because γ-FeSi2 is metallic [5, 9].
Lanthanum fluoride (LaF3) is an optically transparent solid with a hexagonal lattice and a band gap of approximately 10.3 eV.
62, Z = 8), (ii) an indirect transition semiconductor with a band gap of approximately 0.82 eV, and (iii) an absorption coefficient of 7.8 × 105 cm−1 at 1.5 eV photon, which is higher than that of Ge (4.5 × 105 cm−1 at 1.5 eV photon).
Scanning tunneling spectra show that the film exhibits a semiconducting character with a band gap of approximately 0.85 eV.
Scanning tunneling spectroscopy measurements show that the c (4 × 8) thin film exhibits a semiconducting character with a band gap of approximately 0.85 eV.
