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The conductivity of silicon is a function of incident pump power.
Figure 3 shows the probabilities of these processes as a function of incident H-atom energy.
(d) Transient charge as a function of incident light intensity for both architectures.
Figure 12 shows the sputtering yield as a function of incident kinetic energy for AIREBO calculations.
Figure 3 Probabilities of reflection, transmission, and adsorption as a function of incident kinetic energy.
b Responsivity and corresponding current as a function of incident light power under back-side illumination.
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Figure 2b shows the spin orientation as a function of the incident angles and the incident energies.
(a) The contour plot of the transmission probability as a function of the incident angle and the incident energy, for a fixed barrier width d = 1 and height V = 4, for magnetic field B = 0. (b) The spin orientation of the incident (black arrows), transmitted (red arrows), and reflected (green arrows) electrons as a function of the incident angle and energy.
The parameter η is a function of the incident angle, where η = 0 corresponds to normal bombardment, or zero incident angle between the incident beam and the z axis.
The output power of the photovoltaic system depends directly on the amount of tilted global irradiance absorbed by the surface which is a function of the incident tilted global irradiance, air mass and angle of incidence [20].
Figure 3b shows the spin orientation as a function of the incident angles and energies, which is also asymmetric with respect to the incident angles, as a consequence of the perpendicular inhomogeneous magnetic field.
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