Sentence examples for a function of drain from inspiring English sources

Fracture trace length, orientation, and density also play a role, albeit secondary to the distribution of transmissivity, in defining drain length as a function of drain orientation relative to the mean fracture set orientation.

(b) Subthreshold drain leakage current as a function of drain bias for all devices under a closed-gate condition of Vg = −5 V. Figure 4a plots cross sections of the electron concentration distribution at a closed-gate condition of Vg = −5 V and Vds = 80 V for all devices.

Lastly, the thermal influences on the device behaviour such as off-state and on-state gate leakage, barrier inhomogeneities at Schottky contacts, zero temperature coefficients at the transfer curve, and the threshold voltage as a function of drain bias were measured and analyzed for the both pre and post fabricated multilayer devices.

As a function of drain-source voltage for (a) single-gate ZnO MOSFETs and (b) multiple-gate ZnO MOSFETs.

Drain-source current Ids as a function of drain-source voltage for different values of Vtg (lower graph) [22].

In general, the drain current, I D as a function of the drain voltage, V D, and gate voltage, V GS is given as follows: I D = μ eff C G 2 L 2 V G S − V T V D − V D 2 1 + V D / V C (18). for 0 ≤ V D  ≤ V Dsat.

Figure 3a,b, respectively, shows the characteristics of the drain-source current (IDS) as a function of the drain-source voltage (VDS) of the single-gate ZnO MOSFETs and the multiple-gate ZnO MOSFETs measured using an Agilent 4156C semiconductor parameter analyzer (Santa Clara, CA, USA).

Fig. 3 Photocurrent as a function of source-drain voltage.

IDS as a function of voltage between drain and source (VDS) under different gate voltages (VG) was plotted in Figure 3a, where the gate voltages modulated the current through the nanowire obviously.

The expression for the drain current is computed as a function of gate-to-drain bias via integral expression.

d AFM height profile of a SnSe nanoflake, for estimating the thickness of, and fabricating FET devices Fig. 4 a Drain current (I d) as a function of applied source-drain voltage (V ds), for the gate voltages (V g) of −30, 0, and 30 V, for a 90-nm-thick SnSe nanoflake FET, at room temperature.