Sentence examples for a drain source from inspiring English sources

A 2 × 15 μm HEMT showed an extrinsic peak transconductance of 1130 mS/mm at a drain–source voltage of 2.0 V.

A 2 × 35 μm HEMT exhibited a current gain cut-off frequency of 200 GHz and a power gain cut-off frequency of 310 GHz at a drain–source voltage of 1.1 V.

Upon cooling from 300 K to 77 K, the dc transconductance gm was enhanced by 30% at a drain-source voltage VDS of 0.1 V.

The dependence of the transconductance on the gate-source voltage of the single-gate ZnO MOSFETs and the multiple-gate ZnO MOSFETs operated at a drain-source voltage of 10 V was shown in Figure 4a,b, respectively.

(c) Scanning electron microscope image of the electrodes connecting to the nanofibers as indicated in (b). Figure 3a shows the measured transfer characteristics, i.e., current versus gate voltage for a drain-source voltage of -15 V for p 6P nanofibers on a BC/BG device.

To further investigate the function of the multiple-gate structure, the characteristics of the gate-source current (IGS) as a function of the gate-source voltage of both the ZnO MOSFETs were measured at a drain-source voltage of 10 V; the measured results were shown in Figure 5.

The main bias stress induced instability appears as a shift in the threshold voltage (Vth) or as a decrease in drain source current (IDS) at fixed voltage.

Figure 3b shows electrical measurements made by applying a voltage between the drain–source electrodes and measuring the current flowing through the organic nanofibers/flakes grown on narrow (w = 200 nm) and wide (w = 2 μm) electrodes, respectively, with zero volts applied to the gate.

V DSsat is the saturation drain–source voltage.

Compared with the single-gate ZnO MOSFETs, the associated performances of the multiple-gate ZnO MOSFETs, including a higher drain-source saturation current of 12.41 mA/mm, a higher transconductance of 5.35 mS/mm, and a lower anomalous off-current of 5.7 μA/mm, could be effectively enhanced.

Figure 2 shows the transfer curves (I D V GS) measured at 20 °C from the FET with a W/L of 30/10 μm at a drain-to-source voltage (V DS) of −0.1 V.