The phrase "a device level" is correct and usable in written English.
It can be used when referring to a specific level of operation or functionality related to a device, often in technical or engineering contexts.
Example: "The software needs to be optimized for a device level to ensure compatibility with various hardware configurations."
Alternatives: "a hardware level" or "a component level".
In this paper, a device level approach was conducted to achieve linear output frequency tuning in an LC resonant system.
Historically, most of the CR research has focused on optimizing at a device level, with network-level programmability being a recent afterthought[64].
This paper proposes a device level solution to achieve linear frequency tuning with respect to a tuning voltage (V tune ) sweep in an inductor (L capacitor (C) resonant system.
On a device level, the Android G1 (HTC Dream) actually overtook the Palm Centro, becoming the No. 4 smartphone in terms of Web usage in the U.S. (after the iPhone, the Blackberry 8300, and Blackberry 8100).
And if you're thinking about getting around the limit by just creating a second account, Pandora says that won't work, because it's applying the cap at both an account and a device level.
Although the technology operates on a device level, information technology consists of a complex system of socio-technical practices, and its context of use forms the basis for discussing its role in changing possibilities for accessing information, and thereby impacting privacy.
Developing a device-level SOA middleware platform based on IEC 61850 principles could significantly facilitate standards-compliant DER integration and accelerate microgrid deployment.
This paper reports about a device-level simulation of the capacitive crosstalk between the actuators and the sensing elements of a resonant-cantilever gas-sensor based on CMOS technology.
This paper reports a device-level approach for improvement of energy conversion efficiency by directly compensating the effective stiffness of a cantilever-type vibration energy harvester through magnetic effect.
This paper proposes a device-level aging assessment and prediction model using the signal slope as aging quantifier, that accounts not only for the intrinsic self-degradation but also for the influence of the surrounding circuit topology.
In addition to the device-level characterization of a SiGe BiCMOS platform, improved circuit design and a device-level collector substrate leakage suppression technique are shown to improve the viability of SiGe bandgap reference (BGR) circuits on low-cost, bulk Si wafers for high temperature applications.
