The phrase "a deeper potential" is correct and usable in written English.
It can be used when discussing the possibility of greater depth or significance in a particular context, such as personal growth, ideas, or projects.
Example: "Through self-reflection and exploration, she discovered a deeper potential within herself that she had never realized before."
Alternatives: "greater potential" or "more profound potential".
Tetris in Tel Aviv might be a bit of a damp squib, but only because it had a deeper potential.
The potential contour in Fig. 8a shows that D_Spacer with HfO2 dielectric creates a deeper potential well.
In contrast, introducing the EBL can raise the conduction band of the GaN channel layer by the bandgap difference, building a deeper potential well to confine 2-DEG, preventing punchthrough.
So in the pre-WTO world, British distributors paid a little more for bananas, farmers on this island sent their kids to college on yellow gold, there was a deeper potential for recovering from disease, and Dominicans got to live in their Dominica.
It is shown that the measured distributions of rupture forces still contain high forces that cannot be described by the forced dissociation from a deep potential well.
Relatively minor products include H2CCHCHC H O + CO (20-3%), vinylketene + HCO (12-2%), and OC(H CHCHCHCO + H (3-5%), which are formed via the OC(H CHCHCHC(H O intermediate residing in a deep potential well, and highly endothermic C5H5O + O (up to 6.5% at 2500 K) produced directly by the OO bond cleavage in the initial complex.
The analysis of chiral resolution has been made for particles immersed in water demonstrating that in the analyzed conditions one type of enantiomer is trapped in a deep potential and the others are transported by the chiral conveyor toward another trap located in a different geometrical region.
And this negative Gate2 bias also induces a deep potential well under Gate2.
Therefore, the employment of Pt nanodots can obtain a deep potential well in memory devices to ensure good data retention, together with good compatibility with CMOS processing.
Therefore, the employment of Ni NPs as the charge storage medium can obtain a deep potential well in nonvolatile memory devices by selecting appropriate insulators, hereby ensuring good data retention.
Au NCs with high work functions (5.1 eV) enable the creation of a deep potential well to trap charge carriers, such as HfO2, with high dielectric constants (20 to 25) and relatively high barrier heights (−5.7 eV).
