The phrase "a coefficient of performance of" is correct and usable in written English.
It is typically used in technical contexts, particularly in engineering and thermodynamics, to describe the efficiency of a system, such as a heat pump or refrigerator.
Example: "The system achieved a coefficient of performance of 4.5, indicating its high efficiency in transferring heat."
Alternatives: "a performance coefficient of" or "an efficiency ratio of".
A coefficient of performance of 7.7 is determined.
The system is designed to deliver 2.71-kW of cooling at extreme ambient temperature of 51.7 °C at a coefficient of performance of 0.55.
This temperature results 2.1 °C lower than that of the room ambient, for 90 W of supplied electric power to the thermoelectric modules, with a coefficient of performance of 0.34.
The results showed a total energy efficiency of the PVT of 49%, a heat pump yearly coefficient of performance for heating mode above 4 and a coefficient of performance of the adsorption chiller of 0.55.
Heat removal is done with chilled water at 15-20°C 15-20°Cd by a chiller, which oprovidedat a coefficient of performance of seven [ 30].
Second law efficiencies of up to 45% could be achieved, resulting in a coefficient of performance (COP) of 2.1 at −30 °C ambient temperature.
Under the standard test conditions of 80 °C hot water, 30 °C cooling water, and 14 °C chilled water inlet temperatures, a cooling power of 4.3 kW and a coefficient of performance (COP) for cooling of 0.45 can be achieved.
Theoretical investigations of the expected performance of the designed cooling unit have shown a coefficient of performance (COP) of 0.28 for the solar-operated system based on the heat input to the adsorption unit, at the design conditions of Tevap=−5 °C, Tcon=55 °C, Tads=38 °C, Tdes(max)=122 °C.
The optimum designs were determined using the obtained weights and biases of the best ANN topology, yielding a coefficient of performance (COP) and exergy efficiency of 0.5722 and 0.6201, respectively.
As a result, a rate of wafer temperature change of 1 °C/s and uniformity of ±0.7% with a coefficient of performance exceeding 3 is achieved over a wafer with a diameter of 300 mm during the etching process.
