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The results from the developed model indicate a CC of 0.76 between the predicted and observed Hermanus K index and a CC of 0.88 for Kp index.
(b) Good data retention is observed in the S2 devices for a CC of 1 nA.
Good data retention characteristics of 48 h are obtained at a CC of 300 μA.
(a) I-V hysteresis at a CC of 1 nA for a Ge0.2Se0.8 solid electrolyte.
A change of HRS is observed at a CC of 50 μA.
This RRAM device is operated with a CC of 300 μA.
was achieved with a small nanofilament diameter of 0.17 nm under a CC of 0.1 μA.
It is found the stable retention characteristics of >48 h at a CC of 1 mA (Figure 11a).
Good data retention of >104 s for a CC of 50 μA at 85°C is also observed.
As a CC of 300 μA, the conducting filament has a shape of conical or pyramid type.
One hundred consecutive I-V switching cycles at a CC of 100 μA are shown in Figure 6a.
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