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(a) bottom interface and (b) top interface.
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Two distinct graded thin films were fabricated: one with a compositionally asymmetric structure consisting of a SiO2-rich bottom interface and a Al2O3-rich top surface, and the other with a compositionally balanced sandwich structure consisting of both the top surface and bottom interface rich in SiO2 and a core rich in Al2O3 (referred to as SGS for 'sandwich graded structure').
It can therefore be concluded that there is a higher degree of ordering near the bottom interface.
It could be deduced from the preliminary observations that Ti was deposited first in the deposition sequence of metal layers and probably in two steps; its bottom interface with polysilicon gives a TiSi silicide low-resistivity ohmic contacts, while its high adhesion properties are used to ensure a better interface quality between Au metallic films and insulating layers.
In a second step a cross-plane gradient film with varying x from 0 (bottom interface) to 0.5 (surface) was prepared and it was confirmed by Rutherford backscattering spectrometry and by secondary neutral mass spectrometry that the gradient can be maintained up to an annealing temperature of 400 °C.
The fundamentals of phase inversion of cellulose acetate (CA) regarding the formation of an ultra-thin selective layer at the bottom interface of polymer and casting substrate were investigated by using substrates with different hydrophilicity.
A larger radiation dose brings more holes at the bottom interface.
Since the bottom interface with Nb-doped SrTiO3 substrate in an Ohmic contact, the major contribution for the electroresistance will come from the upper interface.
Dopingless concept based on work function engineering have also introduced a new conduction mechanism for impact ionization devices with electron current at bottom interface and hole current at top interface, which is reverse phenomenon in compare to conventional device.
Moreover, due to the smoothness of the model, the maximum dipping angle of the bottom interface is small enough (5°; see, for example, Fig. 3(a) or Fig. 4).
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